DEPOSITION OF TUNGSTEN SILICIDE FILMS BY THE CHEMICAL VAPOR REACTION OF DICHLOROSILANE AND TUNGSTENHEXAFLUORIDE

被引：6

作者：

HARA, T

MIYAMOTO, T

YOKOYAMA, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1988年 / 27卷 / 10期

关键词：

D O I：

10.1143/JJAP.27.L1812

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L1812 / L1814

页数：3

共 9 条

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[2]

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[3] COMPOSITION OF CVD TUNGSTEN SILICIDES [J].

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[4]

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[5]

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[7] PROPERTIES OF LOW-PRESSURE CVD TUNGSTEN SILICIDE FOR MOS VLSI INTERCONNECTIONS [J].

SARASWAT, KC ;

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BEYERS, R .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) :1497-1505

[8] PROPERTIES OF CHEMICAL VAPOR-DEPOSITED TUNGSTEN SILICIDE FILMS USING REACTION OF WF6 AND SI2H6 [J].

SHIOYA, Y ;

IKEGAMI, K ;

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MAEDA, M .

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[9]

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