TRANSIENT THERMOELECTRIC EFFECT IN BISMUTH SINGLE-CRYSTALS

被引：10

作者：

SASAKI, M ^{[1
]}

TAI, GX ^{[1
]}

INOUE, M ^{[1
]}

BIDADI, H ^{[1
]}

机构：

[1] TABRIZ UNIV,DEPT PHYS,TABRIZ,IRAN

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 09期

关键词：

D O I：

10.1063/1.355944

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The photo-induced transient thermoelectric effect (TTE) has been measured for bismuth single crystals along nearly tbe X and Y axes over the temperature range 6-300 K and time range 50 ns-2 ms. The decay curves of the TTE voltages are characterized by multiple relaxation processes for thermal diffusions of photogenerated electrons and holes. From the analysis of the relaxation times, we have evaluated the carrier mobilities and their effective masses of each carrier pocket at the L and T points based on the existing band model; in particular, we have found an additional hole pocket at the L point lying below the Fermi energy. This TTE technique is shown to be useful for understanding electronic properties of a multicarrier system.

引用

页码：4520 / 4526

页数：7

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