HYDROGEN PASSIVATION OF EL2 DEFECTS AND H-2-ASTERISK-LIKE COMPLEX-FORMATION IN GALLIUM-ARSENIDE

被引：13

作者：

BONAPASTA, AA

机构：

[1] Consiglio Nazionale delle Ricerche, Istituto di Chimica del Materiali, 00016 Monterotondo Scalo, Via Salaria km. 29,5

来源：

PHYSICAL REVIEW B | 1995年 / 51卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.51.4172

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A complex formed by one As antisite (AsGa), one As, and two H atoms is proposed, in GaAs, which is reminiscent of the H2* defect in crystalline Si and properly accounts for the hydrogen neutralization of the EL2 deep donor activity. It is noticeably stable, in agreement with experimental results. The geometry and electronic structure of this complex present interesting connections with those of the isolated As antisite which clarify the EL2 passivation mechanism. © 1995 The American Physical Society.

引用

页码：4172 / 4175

页数：4

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