RESIST CONTRAST ENHANCEMENT IN HIGH-RESOLUTION ELECTRON-BEAM LITHOGRAPHY

被引:2
作者
CHIONG, KG [1 ]
ROTHWELL, MB [1 ]
WIND, S [1 ]
BUCCHIGNANO, J [1 ]
HOHN, FJ [1 ]
KVITEK, R [1 ]
机构
[1] IBM CORP,DIV GEN TECHNOL,HOPEWELL JUNCTION,NY 12533
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 06期
关键词
D O I
10.1116/1.584455
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1771 / 1777
页数:7
相关论文
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