OMVPE GROWTH OF ZNSE AND ZNSXSE1-X USING METHYLSELENOL AS A SELENIUM SOURCE

被引：9

作者：

HIRATA, SY ^{[1
]}

FUJITA, S ^{[1
]}

ISEMURA, M ^{[1
]}

机构：

[1] SUMITOMO CHEM CO LTD,DIV ELECTR MAT,CHUO KU,TOKYO 103,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 104卷 / 02期

关键词：

D O I：

10.1016/0022-0248(90)90154-D

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We investigated the usefulness of methylselenol (CH3SeH, MSeH) as a new selenium source in organometallic vapor-phase epitaxy (OMVPE) of ZnSe and ZnSxSe1-x. Since this precursor has a high vapor pressure (760 Torr at 12°C), it was supplied as a gas diluted with H2. The growth temperature was successfully reduced (typically 400°C) compared with that in the growth using dialkyl-compounds, without serious gas-phase prereaction. The low growth temperature improved the photoluminescence properties of ZnSe. A ZnS0.07Se0.93 epilayer closely lattice-matched to GaAs substrate had an excellent FWHM value in X-ray rocking curve (19 arc sec), and exhibited strong near band-edge emissions in photoluminescence. For iodine-doped ZnS0.07Se0.93 epilayers, carrier concentration of 5 x 1017 cm-3 was attained without serious degradation of epilayer qualities. Thus MSeH was found to be a promising Se source in OMVPE of II-VI compounds including Se. © 1990.

引用

页码：521 / 526

页数：6

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