A TRIPLE-DRAIN MOSFET MAGNETIC-FIELD SENSOR

[1] TWO-DIMENSIONAL NUMERICAL-ANALYSIS OF A SILICON MAGNETIC-FIELD SENSOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (07) : 996 - 999

[2] DEVICE MODELING [J]. PROCEEDINGS OF THE IEEE, 1983, 71 (01) : 10 - 33

[3] DERIVATION OF 1/F NOISE IN SILICON INVERSION LAYERS FROM CARRIER MOTION IN A SURFACE BAND [J]. SOLID-STATE ELECTRONICS, 1968, 11 (06) : 621 - +

[4] NATHAN A, 1984, THESIS U ALBERTA EDM

[5] A CMOS MAGNETIC-FIELD SENSOR [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1983, 18 (04) : 426 - 428

[6] SZE SM, 1981, PHYSICS SEMICONDUCTO

[7] FIELD-DEPENDENT MOBILITY MODEL FOR 2-DIMENSIONAL NUMERICAL-ANALYSIS OF MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (07) : 1068 - 1074

[1] TWO-DIMENSIONAL NUMERICAL-ANALYSIS OF A SILICON MAGNETIC-FIELD SENSOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (07) : 996 - 999

[2] DEVICE MODELING [J]. PROCEEDINGS OF THE IEEE, 1983, 71 (01) : 10 - 33

[3] DERIVATION OF 1/F NOISE IN SILICON INVERSION LAYERS FROM CARRIER MOTION IN A SURFACE BAND [J]. SOLID-STATE ELECTRONICS, 1968, 11 (06) : 621 - +

[4] NATHAN A, 1984, THESIS U ALBERTA EDM

[5] A CMOS MAGNETIC-FIELD SENSOR [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1983, 18 (04) : 426 - 428

[6] SZE SM, 1981, PHYSICS SEMICONDUCTO

[7] FIELD-DEPENDENT MOBILITY MODEL FOR 2-DIMENSIONAL NUMERICAL-ANALYSIS OF MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (07) : 1068 - 1074