QUENCHED PHONON DRAG IN SILICON MICROCONTACTS

被引:31
作者
TRZCINSKI, R
GMELIN, E
QUEISSER, HJ
机构
关键词
D O I
10.1103/PhysRevLett.56.1086
中图分类号
O4 [物理学];
学科分类号
0702 ;
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页码:1086 / 1089
页数:4
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  • [1] BOGACHEK EN, 1985, JETP LETT+, V41, P633
  • [2] DAHLBERG R, COMMUNICATION
  • [3] DAHLBERG R, Patent No. 2547262
  • [4] VERY HIGH ELECTRON VELOCITY IN SHORT GALLIUM-ARSENIDE STRUCTURES
    EASTMAN, LF
    [J]. FESTKORPERPROBLEME-ADVANCES IN SOLID STATE PHYICS, 1982, 22 : 173 - 187
  • [5] FERRY DK, 1982, HDB SEMICONDUCTORS, pCHA11
  • [6] THERMOELECTRIC POWER OF GERMANIUM BELOW ROOM TEMPERATURE
    FREDERIKSE, HPR
    [J]. PHYSICAL REVIEW, 1953, 92 (02): : 248 - 252
  • [7] SEEBECK EFFECT IN SILICON
    GEBALLE, TH
    HULL, GW
    [J]. PHYSICAL REVIEW, 1955, 98 (04): : 940 - 947
  • [8] THERMOVOLTAIC EVIDENCE FOR ELECTRONIC KNUDSEN-FLOW THROUGH SILICON MICROCONTACTS
    GERLACHMEYER, U
    QUEISSER, HJ
    [J]. PHYSICAL REVIEW LETTERS, 1983, 51 (20) : 1904 - 1906
  • [9] ASYMMETRIC JOULE HEAT-PRODUCTION AT A POINT CONTACT
    GERLACHMEYER, U
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 33 (03): : 161 - 165
  • [10] GERLACHMEYER U, 1985, 17TH P INT C PHYS SE, P1309