VERY HIGH ELECTRON VELOCITY IN SHORT GALLIUM-ARSENIDE STRUCTURES

被引:10
作者
EASTMAN, LF [1 ]
机构
[1] CORNELL UNIV,NATL RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853
来源
FESTKORPERPROBLEME-ADVANCES IN SOLID STATE PHYICS | 1982年 / 22卷
关键词
D O I
10.1007/BFb0107939
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:173 / 187
页数:15
相关论文
共 4 条
  • [1] Levy H. M., 1981, International Electron Devices Meeting, P88
  • [2] PLANAR-DOPED BARRIERS IN GAAS BY MOLECULAR-BEAM EPITAXY
    MALIK, RJ
    AUCOIN, TR
    ROSS, RL
    BOARD, K
    WOOD, CEC
    EASTMAN, LF
    [J]. ELECTRONICS LETTERS, 1980, 16 (22) : 836 - 837
  • [3] PICOSECOND NON-EQUILIBRIUM CARRIER TRANSPORT IN GAAS
    SHANK, CV
    FORK, RL
    GREENE, BI
    REINHART, FK
    LOGAN, RA
    [J]. APPLIED PHYSICS LETTERS, 1981, 38 (02) : 104 - 105
  • [4] STONEHAM EB, 1981, 1981 P CORN IEEE C I