HIGH-PERFORMANCE METAL SILICIDE ANTIFUSE

被引：17

作者：

WANG, SJ

MISIUM, GR

CAMP, JC

CHEN, KL

TIGELAAR, HL

机构：

[1] Semiconductor Process and Design Center, Texas Instruments Incorporated, Dallas

来源：

IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 09期

关键词：

D O I：

10.1109/55.192798

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter reports a low-programmed-resistance, low-thermal-budget, high-performance metal/silicide antifuse. The programmed ON-State resistance of the metal / silicide antifuse is around 60-OMEGA, which is a factor of 10 less than that of Si-based antifuses (poly / n + and poly / poly). Metal / silicide antifuses also eliminate the nonlinear ON-State resistance seen in Si-based antifuses. Programming of the antifuse can be done in 2 ms at 14 V, which is comparable to Si-based antifuses. Both ON- and OFF-state reliability of the metal / silicide antifuse are shown to be satisfactory.

引用

页码：471 / 472

页数：2

共 6 条

[1]

CHIANG S, 1990, P INT RELIABILITY PH, P186

[2]

Hamdy E., 1988, International Electron Devices Meeting. Technical Digest (IEEE Cat. No.88CH2528-8), P786, DOI 10.1109/IEDM.1988.32929

[3] SCALED DIELECTRIC ANTIFUSE STRUCTURE FOR FIELD-PROGRAMMABLE GATE ARRAY APPLICATIONS [J].