EFFECTS OF POLY DEPLETION ON THE ESTIMATE OF THIN DIELECTRIC LIFETIME

被引：16

作者：

SHOUE, JW

CHEN, IC

TIGELAAR, HL

机构：

[1] Semiconductor Process and Design Center, Texas Instruments Incorporated, Dallas

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 11期

关键词：

Dielectric Materials - Statistical Methods;

D O I：

10.1109/55.119216

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Poly-gate depletion during the accelerated time-dependent breakdown (TDDB) test of single-doping-type capacitors (both electrodes of the same doping type) results in an overestimate of dielectric lifetime at operation voltage. Simple high-field data extrapolation falls to take into account the voltage-dependent poly band bending. We found a three orders of magnitude overestimate of lifetime at 5 V for 68-angstrom oxide equivalent poly/poly capacitors. After correcting for the poly depletion effects, the slope of the TDDB projection line decreases by 18%. The effects can be minimized by performing TDDB testing below the top poly inversion voltage. Calculated maximum allowable TDDB voltages for different gate doping and oxide thickness are presented as guidelines for test design.

引用

页码：617 / 619

页数：3

共 5 条

[1]

Chapman R. A., 1988, International Electron Devices Meeting. Technical Digest (IEEE Cat. No.88CH2528-8), P52, DOI 10.1109/IEDM.1988.32748

[2]

FISHBEIN BJ, 1990, P INT RELIABILITY PH, P159

[3]

Hamdy E., 1988, International Electron Devices Meeting. Technical Digest (IEEE Cat. No.88CH2528-8), P786, DOI 10.1109/IEDM.1988.32929

[4] ANOMALOUS C-V CHARACTERISTICS OF IMPLANTED POLY MOS STRUCTURE IN N+/P+ DUAL-GATE CMOS TECHNOLOGY [J].

LU, CY ;

SUNG, JM ;

KIRSCH, HC ;

HILLENIUS, SJ ;

SMITH, TE ;

MANCHANDA, L .

IEEE ELECTRON DEVICE LETTERS, 1989, 10 (05) :192-194

[5]

Shen B. W., 1989, International Electron Devices Meeting 1989. Technical Digest (Cat. No.89CH2637-7), P27, DOI 10.1109/IEDM.1989.74221

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