CHEMICAL-SHIFT LOW-ENERGY PHOTOELECTRON DIFFRACTION - A DETERMINATION OF THE INP(110) CLEAN SURFACE STRUCTURAL RELAXATION

被引：34

作者：

GOTA, S

GUNNELLA, R

WU, ZY

JEZEQUEL, G

NATOLI, CR

SEBILLEAU, D

BULLOCK, EL

PROIX, F

GUILLOT, C

QUEMERAIS, A

机构：

[1] CENS,SRSIM,F-91191 GIF SUR YVETTE,FRANCE

[2] UNIV CAMERINO,IST NAZL FIS,DIPARTIMENTO FIS,MAT RES UNIT,I-62032 CAMERINO,ITALY

[3] LAB NAZL FRASCATI,IST NAZL FIS NUCL,I-00044 FRASCATI,ITALY

[4] UNIV RENNES 1,SPECTROSCOPIE SOLIDE LAB,F-35042 RENNES,FRANCE

[5] UNIV LAUSANNE,INST PHYS EXPTL,CH-1015 LAUSANNE,SWITZERLAND

[6] UNIV PARIS 06,PHYS SOLIDES LAB,F-75252 PARIS 05,FRANCE

来源：

PHYSICAL REVIEW LETTERS | 1993年 / 71卷 / 20期

关键词：

D O I：

10.1103/PhysRevLett.71.3387

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We establish chemical-shift low-energy photoelectron diffraction as a novel and powerful method for the determination of clean surface structures. Combined with a new theoretical approach based on full multiple scattering theory with complex potential, the method is applied to the case of the InP(110) clean surface relaxation. The extreme sensitivity of this technique to structural parameters allows us to measure with good accuracy both the first layer and the second layer relaxation angle (respectively 23-degrees and -5-degrees).

引用

页码：3387 / 3390

页数：4

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