PSEUDOPOTENTIAL VALENCE CHARGE-DENSITIES IN HOMOPOLAR AND HETEROPOLAR SEMICONDUCTORS

被引：7

作者：

CHELIKOWSKY, JR

COHEN, ML

机构：

[1] UNIV CALIF,DEPT PHYS,BERKELEY,CA 94720

[2] LAWRENCE BERKELEY LAB,MAT & MOLEC RES DIV,BERKELEY,CA 94720

来源：

关键词：

D O I：

10.1103/PhysRevLett.36.229

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：229 / 231

页数：3

共 12 条

[1] BILDERBACK D, TO BE PUBLISHED
[2] VALENCE CHARGE-DENSITY IN INDIUM-ANTIMONIDE
BILDERBACK, DH
COLELLA, R
[J]. PHYSICAL REVIEW LETTERS, 1975, 35 (13) : 858 - 860
[3] CHADI DJ, 1973, PHYS REV B, V8, P5578
[4] CALCULATED VALENCE-BAND DENSITIES OF STATES AND PHOTOEMISSION SPECTRA OF DIAMOND AND ZINCBLENDE SEMICONDUCTORS
CHELIKOWSKY, J
CHADI, DJ
COHEN, ML
[J]. PHYSICAL REVIEW B, 1973, 8 (06) : 2786 - 2794
[5] ELECTRONIC CHARGE-DENSITIES AND TEMPERATURE-DEPENDENCE OF FORBIDDEN (222) REFLECTION IN SILICON AND GERMANIUM
CHELIKOWSKY, JR
COHEN, ML
[J]. PHYSICAL REVIEW LETTERS, 1974, 33 (22) : 1339 - 1342
[6] CHELIKOWSKY JR, TO BE PUBLISHED
[7] CHELIKOWSKY JR, 1974, PHYS REV B, V10, P5075
[8] Cohen M. L., 1970, Solid state physics: advances in research and applications, P37, DOI 10.1016/S0081-1947(08)60070-3
[9] PHOTOEMISSION SPECTROSCOPY USING SYNCHROTRON RADIATION .1. OVERVIEWS OF VALENCE-BAND STRUCTURE FOR GE, GAAS, GAP, INSB, ZNSE, CDTE, AND AGL
EASTMAN, DE
GROBMAN, WD
FREEOUF, JL
ERBUDAK, M
[J]. PHYSICAL REVIEW B, 1974, 9 (08): : 3473 - 3488
[10] TOTAL VALENCE-BAND DENSITIES OF STATES OF III-V AND II-VI COMPOUNDS FROM X-RAY PHOTOEMISSION SPECTROSCOPY
LEY, L
POLLAK, RA
MCFEELY, FR
KOWALCZY.SP
SHIRLEY, DA
[J]. PHYSICAL REVIEW B, 1974, 9 (02): : 600 - 621