ELECTRON-ESCAPE DEPTH VARIATION IN THIN SIO2-FILMS MEASURED WITH VARIABLE PHOTON ENERGY

被引：21

作者：

HECHT, MH ^{[1
]}

GRUNTHANER, FJ ^{[1
]}

PIANETTA, P ^{[1
]}

JOHANSSON, LI ^{[1
]}

LINDAU, I ^{[1
]}

机构：

[1] STANFORD SYNCHROTRON RADIAT LAB,STANFORD,CA 94305

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1984年 / 2卷 / 02期

关键词：

D O I：

10.1116/1.572450

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：584 / 587

页数：4

共 6 条

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[5] PERFORMANCE AND APPLICATION OF A DOUBLE CRYSTAL MONOCHROMATOR IN THE ENERGY REGION 800 LESS-THAN-OR-EQUAL-TO HV LESS-THAN-OR-EQUAL-TO 4500 EV [J].

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