RAPID HETEROEPITAXIAL GROWTH OF GE FILMS ON (100) GAAS BY PULSED SUPERSONIC FREE-JET CHEMICAL BEAM EPITAXY

被引：29

作者：

ERES, D

LOWNDES, DH

TISCHLER, JZ

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 10期

关键词：

D O I：

10.1063/1.102261

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1008 / 1010

页数：3

共 12 条

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