ARF LASER PHOTOCHEMICAL DEPOSITION OF AMORPHOUS-SILICON FROM DISILANE - SPECTROSCOPIC STUDIES AND COMPARISON WITH THERMAL CVD

被引：16

作者：

ERES, D

GEOHEGAN, DB

LOWNDES, DH

MASHBURN, DN

机构：

来源：

关键词：

D O I：

10.1016/0169-4332(89)90900-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：70 / 80

页数：11

共 16 条

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[2] ERES D, 1988, MATER RES SOC S P, V101, P355
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[4] VACUUM ULTRAVIOLET-ABSORPTION CROSS-SECTIONS OF SIH4, GEH4, SI2H6, AND SI3H8
ITOH, U
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ONUKI, H
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IBUKI, T
[J]. JOURNAL OF CHEMICAL PHYSICS, 1986, 85 (09) : 4867 - 4872
[5] ABSOLUTE RATE CONSTANTS FOR THE REACTION OF SILYLENE WITH HYDROGEN, SILANE, AND DISILANE
JASINSKI, JM
CHU, JO
[J]. JOURNAL OF CHEMICAL PHYSICS, 1988, 88 (03) : 1678 - 1687
[6] MECHANISTIC STUDIES OF CHEMICAL VAPOR-DEPOSITION
JASINSKI, JM
MEYERSON, BS
SCOTT, BA
[J]. ANNUAL REVIEW OF PHYSICAL CHEMISTRY, 1987, 38 : 109 - 140
[7] JOANNOPOULOS JD, 1984, PHYSICS AMORPHOUS HY, V55
[8] KING KK, 1987, MATER RES SOC S P, V75, P189
[9] LUKOVSKY C, 1979, PHYS REV B, V19, P2064
[10] HYDROGEN EVOLUTION FROM PLASMA-DEPOSITED AMORPHOUS SILICON FILMS
MATYSIK, KJ
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BAGLEY, BG
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02): : 302 - 304