MECHANISTIC STUDIES OF CHEMICAL VAPOR-DEPOSITION

[1] SURFACE PROCESSES IN GROWTH SILICON ON (111)SILICON IN ULTRAHIGH VACUUM [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) : 4673 - &

[2] ELECTRONIC AND OPTICAL-PROPERTIES OF AMORPHOUS SI-H FILMS DEPOSITED BY CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1982, 41 (12) : 1146 - 1148

[3] CHEMICAL VAPOR-DEPOSITION OF METAL SILICIDES FROM ORGANOMETALLIC COMPOUNDS WITH SILICON METAL BONDS [J]. VACUUM, 1985, 35 (10-1) : 435 - 439

[4] RADIATIVE LIFETIME MEASUREMENTS OF SIH(A2-DELTA) BY LASER-INDUCED FLUORESCENCE [J]. CHEMICAL PHYSICS LETTERS, 1984, 108 (06) : 560 - 561

[5] TEMPERATURE-DEPENDENCE OF THE GROWTH-RATE OF SILICON PREPARED THROUGH CHEMICAL VAPOR-DEPOSITION FROM SILANE [J]. APPLIED PHYSICS LETTERS, 1982, 41 (02) : 153 - 155

[6] KINETICS OF INDUCTION PERIOD FOR NUCLEATION OF SILICON ON SI(111) SUBSTRATES AT U-H-V [J]. PHILOSOPHICAL MAGAZINE, 1970, 22 (175): : 135 - &

[7] PHOTOIONIZATION MASS-SPECTROMETRIC STUDIES OF SIHN (N=1-4) [J]. JOURNAL OF CHEMICAL PHYSICS, 1987, 86 (03) : 1235 - 1248

[8] INFRARED-EMISSION SPECTRUM OF THE RADICAL 28SIH - OBSERVATION AND ANALYSIS OF THE ROVIBRATIONAL BANDS 1-0, 2-1, AND 3-2 IN THE X2II GROUND-STATE [J]. JOURNAL OF CHEMICAL PHYSICS, 1986, 84 (08) : 4121 - 4126

[9] EPITAXIAL-GROWTH OF SILICON BY CVD IN A HOT-WALL FURNACE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (08) : 1973 - 1980

[10] BLOEM J, 1985, VLSI ELECTRONICS MIC, V12, P89

[1] SURFACE PROCESSES IN GROWTH SILICON ON (111)SILICON IN ULTRAHIGH VACUUM [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) : 4673 - &

[2] ELECTRONIC AND OPTICAL-PROPERTIES OF AMORPHOUS SI-H FILMS DEPOSITED BY CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1982, 41 (12) : 1146 - 1148

[3] CHEMICAL VAPOR-DEPOSITION OF METAL SILICIDES FROM ORGANOMETALLIC COMPOUNDS WITH SILICON METAL BONDS [J]. VACUUM, 1985, 35 (10-1) : 435 - 439

[4] RADIATIVE LIFETIME MEASUREMENTS OF SIH(A2-DELTA) BY LASER-INDUCED FLUORESCENCE [J]. CHEMICAL PHYSICS LETTERS, 1984, 108 (06) : 560 - 561

[5] TEMPERATURE-DEPENDENCE OF THE GROWTH-RATE OF SILICON PREPARED THROUGH CHEMICAL VAPOR-DEPOSITION FROM SILANE [J]. APPLIED PHYSICS LETTERS, 1982, 41 (02) : 153 - 155

[6] KINETICS OF INDUCTION PERIOD FOR NUCLEATION OF SILICON ON SI(111) SUBSTRATES AT U-H-V [J]. PHILOSOPHICAL MAGAZINE, 1970, 22 (175): : 135 - &

[7] PHOTOIONIZATION MASS-SPECTROMETRIC STUDIES OF SIHN (N=1-4) [J]. JOURNAL OF CHEMICAL PHYSICS, 1987, 86 (03) : 1235 - 1248

[8] INFRARED-EMISSION SPECTRUM OF THE RADICAL 28SIH - OBSERVATION AND ANALYSIS OF THE ROVIBRATIONAL BANDS 1-0, 2-1, AND 3-2 IN THE X2II GROUND-STATE [J]. JOURNAL OF CHEMICAL PHYSICS, 1986, 84 (08) : 4121 - 4126

[9] EPITAXIAL-GROWTH OF SILICON BY CVD IN A HOT-WALL FURNACE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (08) : 1973 - 1980

[10] BLOEM J, 1985, VLSI ELECTRONICS MIC, V12, P89