CORRELATED-INTERFACIAL-ROUGHNESS ANISOTROPY IN SI1-XGEX/SI SUPERLATTICES

被引：80

作者：

PHANG, YH ^{[1
]}

TEICHERT, C ^{[1
]}

LAGALLY, MG ^{[1
]}

PETICOLOS, LJ ^{[1
]}

BEAN, JC ^{[1
]}

KASPER, E ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.50.14435

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Interfacial roughness in Si1-xGex/Si superlattices grown by molecular-beam epitaxy on vicinal Si(001) surfaces has been investigated using low-angle x-ray-diffraction diffuse-intensity measurements and atomic-force microscopy. The vertically correlated-interfacial roughness is, in specific situations, highly anisotropic and oriented with respect to the substrate miscut. The lateral length scale of the roughness is many times greater than the average separation of the substrate steps. The presence of the anisotropy depends on Ge concentration. A thermodynamic model for the interface morphology is presented. © 1994 The American Physical Society.

引用

页码：14435 / 14445

页数：11

共 35 条

[1] SPONTANEOUS FORMATION OF STRESS DOMAINS ON CRYSTAL-SURFACES
ALERHAND, OL
VANDERBILT, D
MEADE, RD
JOANNOPOULOS, JD
[J]. PHYSICAL REVIEW LETTERS, 1988, 61 (17) : 1973 - 1976
[2] LOW-ANGLE X-RAY REFLECTION STUDY OF ULTRATHIN GE FILMS ON (100) SI
BARIBEAU, JM
[J]. APPLIED PHYSICS LETTERS, 1990, 57 (17) : 1748 - 1750
[3] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY
BEAN, JC
FELDMAN, LC
FIORY, AT
NAKAHARA, S
ROBINSON, IK
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 436 - 440
[4] INDEPENDENT DETERMINATION OF COMPOSITION AND RELAXATION OF PARTLY PSEUDOMORPHICALLY GROWN SI-GE LAYERS ON SILICON BY A COMBINATION OF STANDARD X-RAY-DIFFRACTION AND TRANSMISSION ELECTRON-MICROSCOPY MEASUREMENTS
BUGIEL, E
ZAUMSEIL, P
[J]. APPLIED PHYSICS LETTERS, 1993, 62 (17) : 2051 - 2053
[5] THE CHARACTERISTICS OF STRAIN-MODULATED SURFACE UNDULATIONS FORMED UPON EPITAXIAL SI1-XGEX ALLOY LAYERS ON SI
CULLIS, AG
ROBBINS, DJ
PIDDUCK, AJ
SMITH, PW
[J]. JOURNAL OF CRYSTAL GROWTH, 1992, 123 (3-4) : 333 - 343
[6] CORRELATED ROUGHNESS IN (GE(M)/SI(N))P SUPERLATTICES ON SI(100)
HEADRICK, RL
BARIBEAU, JM
[J]. PHYSICAL REVIEW B, 1993, 48 (12): : 9174 - 9177
[7] INTERFACE ROUGHNESS IN GE/SI SUPERLATTICES
HEADRICK, RL
BARIBEAU, JM
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (04): : 1514 - 1517
[8] GROWTH TEMPERATURE-DEPENDENCE OF INTERFACIAL ABRUPTNESS IN SI/GE HETEROEPITAXY STUDIED BY RAMAN-SPECTROSCOPY AND MEDIUM ENERGY ION-SCATTERING
IYER, SS
TSANG, JC
COPEL, MW
PUKITE, PR
TROMP, RM
[J]. APPLIED PHYSICS LETTERS, 1989, 54 (03) : 219 - 221
[9] DIRECT IMAGING OF INTERFACIAL ORDERING IN ULTRATHIN (SIMGEN)P SUPERLATTICES
JESSON, DE
PENNYCOOK, SJ
BARIBEAU, JM
[J]. PHYSICAL REVIEW LETTERS, 1991, 66 (06) : 750 - 753
[10] JULLIEN R, 1993, SURFACE DISORDERING

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