THE VARIATION OF OPTICAL-ENERGY GAPS WITH COMPOSITION IN PB1-XHGXS ALLOY-FILMS

被引：4

作者：

JAIN, M ^{[1
]}

SEHGAL, HK ^{[1
]}

WARRIER, AVR ^{[1
]}

机构：

[1] MINIST DEF, SOLID STATE PHYS LAB, DELHI 110007, INDIA

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1983年 / 77卷 / 01期

关键词：

D O I：

10.1002/pssa.2210770107

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：67 / 70

页数：4

共 11 条

[1]

ABRIBOSOV NK, 1969, SEMICONDUCTING 2 6 4, P109

[2] ENERGY-BAND STRUCTURE OF ALXGA1-XAS [J].

BALDERESCHI, A ;

HESS, E ;

MASCHKE, K ;

NEUMANN, H ;

SCHULZE, KR ;

UNGER, K .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (23) :4709-4717

[3]

GREENAWAY DL, 1968, OPTICAL PROPERTIES B, P9

[4]

JAIN M, 1982, 15 ANN C EL MICR SOC

[5]

LONG D, 1966, SEMICONDUCT SEMIMET, V1, P150

[6]

LONG D, 1970, SEMICONDUCT SEMIMET, V5, P175

[7] INTRINSIC OPTICAL ABSORPTION AND THE RADIATIVE RECOMBINATION LIFETIME IN PBS [J].

SCANLON, WW .

PHYSICAL REVIEW, 1958, 109 (01) :47-50

[8] RECENT ADVANCES IN THE OPTICAL AND ELECTRONIC PROPERTIES OF PBS, PBSE, PBTE AND THEIR ALLOYS [J].

SCANLON, WW .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 :423-428

[9] OPTICAL AND ELECTRICAL-PROPERTIES OF ELECTROLESS-DEPOSITED PB1-XHGXS FILMS [J].

SHARMA, NC ;

PANDYA, DK ;

SEHGAL, HK ;

CHOPRA, KL .

THIN SOLID FILMS, 1979, 62 (01) :97-108

[10] ELECTROLESS DEPOSITION OF EPITAXIAL PB1-XHGXS FILMS [J].

SHARMA, NC ;

PANDYA, DK ;

SEHGAL, HK ;

CHOPRA, KL .

THIN SOLID FILMS, 1979, 59 (02) :157-164

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