SCHOTTKY-BARRIERS ON P-TYPE GALNAS

被引：16

作者：

SELDERS, J

EMEIS, N

BENEKING, H

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 03期

关键词：

D O I：

10.1109/T-ED.1985.21985

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：605 / 609

页数：5

相关论文

共 20 条

[1] BARRIER HEIGHT AND LEAKAGE REDUCTION IN N-GAAS-PLATINUM GROUP METAL SCHOTTKY BARRIERS UPON EXPOSURE TO HYDROGEN
ASPNES, DE
HELLER, A
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 602 - 607
[2] LPE GROWTH OF GAXIN1-XAS LAYERS ON INP UNDER PH3 PARTIAL-PRESSURE AND RESULTS ON MG-DOPING
BENEKING, H
GROTE, N
SELDERS, J
[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 54 (01) : 59 - 63
[3] DEPLETION MODE MODULATION DOPED AL0.48IN0.52AS-GA0.47IN0.53AS HETEROJUNCTION FIELD-EFFECT TRANSISTORS
CHEN, CY
CHO, AY
CHENG, KY
PEARSALL, TP
OCONNOR, P
GARBINSKI, PA
[J]. ELECTRON DEVICE LETTERS, 1982, 3 (06): : 152 - 155
[4] SCHOTTKY-BARRIER HEIGHT OF AU-PARA-INGAASP ALLOYS LATTICE-MATCHED TO INP
ESCHER, JS
JAMES, LW
SANKARAN, R
ANTYPAS, GA
MOON, RL
BELL, RL
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 874 - 875
[5] PERFORMANCE OF INXGA1-XASYP1-Y PHOTO-DIODES WITH DARK CURRENT LIMITED BY DIFFUSION, GENERATION RECOMBINATION, AND TUNNELING
FORREST, SR
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) : 217 - 226
[6] EFFECTIVE BARRIER HEIGHTS OF MIXED PHASE CONTACTS - SIZE EFFECTS
FREEOUF, JL
JACKSON, TN
LAUX, SE
WOODALL, JM
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (07) : 634 - 636
[7] SIMPLE METHOD FOR ESTIMATING ENERGY-LEVELS OF SOLIDS
FRESE, KW
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (04): : 1042 - 1044
[8] SCHOTTKY-BARRIER HEIGHT OF N-INXGA1-XAS DIODES
KAJIYAMA, K
MIZUSHIMA, Y
SAKATA, S
[J]. APPLIED PHYSICS LETTERS, 1973, 23 (08) : 458 - 459
[9] KRAUTLE H, UNPUB IEEE T EL DEV
[10] SCHOTTKY BARRIERS ON COMPOUND SEMICONDUCTORS - ROLE OF ANION
MCCALDIN, JO
MCGILL, TC
MEAD, CA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 802 - 806