ANALYSIS OF ANTIREFLECTION COATINGS ON ANGLED FACET SEMICONDUCTOR-LASER AMPLIFIERS

被引：14

作者：

FARRIES, MC

BUUS, J

ROBBINS, DJ

机构：

[1] Plessey Research Caswell Ltd., Northants NN12 8EQ, Towcester

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 06期

关键词：

Lasers and laser applications; Semiconductor devices and materials;

D O I：

10.1049/el:19900248

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An analysis of the modal reflectivity of antireflection coated semiconductor laser amplifiers is presented. The effect of an angle between the facet normal and the amplifier axis is shown to lead to less stringent tolerances on coating index and thickness, and reflectivities of less than 10-4 can be achieved with a 7 facet angle for TE and TM modes simultaneously. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：381 / 382

页数：2

共 8 条

[1] SINGLE-LAYER ANTIREFLECTION COATING OF SEMICONDUCTOR-LASERS - POLARIZATION PROPERTIES AND THE INFLUENCE OF THE LASER STRUCTURE [J].