INSULATION AND PASSIVATION OF 3-DIMENSIONAL SUBSTRATES BY PLASMA-CVD THIN-FILMS USING SILICON ORGANIC-COMPOUNDS

被引：11

作者：

PETERS, D

MULLER, J

SPERLING, T

机构：

[1] TU Hamburg-Harburg, W-2100 Hamburg 90

来源：

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | 1991年 / 139卷

关键词：

D O I：

10.1016/0921-5093(91)90646-5

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A reactor design developed for coating three-dimensional substrates is presented. Cathodic deposition was investigated to obtain highly cross-linked insulating films. The properties of films deposited from hexamethyldisilazane and tetraethylorthosilicate sources are discussed and compared.

引用

页码：380 / 384

页数：5

共 5 条

[1] GAS EVOLUTION STUDIES FOR STRUCTURAL CHARACTERIZATION OF HEXAMETHYLDISILAZANE-BASED A-SI-C-N-H FILMS
GERSTENBERG, KW
BEYER, W
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (05) : 1782 - 1787
[2] GERSTENBERG KW, 1989, 1ST P INT C PLASM SU
[3] PLASMA-ASSISTED CHEMICAL VAPOR-DEPOSITION PROCESSES AND THEIR SEMICONDUCTOR APPLICATIONS
SHERMAN, A
[J]. THIN SOLID FILMS, 1984, 113 (02) : 135 - 149
[4] CORRELATION OF CHEMICAL AND ELECTRICAL-PROPERTIES OF PLASMA-DEPOSITED TETRAMETHYLSILANE FILMS
SZETO, R
HESS, DW
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) : 903 - 908
[5] WEICHERT J, IN PRESS PROG COLLOI

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