CORRELATION OF CHEMICAL AND ELECTRICAL-PROPERTIES OF PLASMA-DEPOSITED TETRAMETHYLSILANE FILMS

[1] Bell A. T., 1974, Techniques and applications of plasma chemistry, P1

[2] THIN-FILM ADHESION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (01): : 106 - 113

[3] ELECTRICAL PROPERTIES OF VAPOR-DEPOSITED SILICON NITRIDE AND SILICON OXIDE FILMS ON SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) : 300 - &

[4] EFFECTS OF PROCESSING ON RADIATION-DAMAGE IN SIO2 [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 644 - 647

[5] Gordon A. J., 1972, CHEM COMPANION HDB P

[6] GROVE AS, 1967, PHYS TECHNOL S, P346

[7] HETZLER Y, 1978, J APPL PHYS, V49, P5617

[8] HIGH-FIELD ELECTRONIC PROPERTIES OF SIO2 [J]. SOLID-STATE ELECTRONICS, 1978, 21 (01) : 251 - 258

[9] ADVANCES IN DEPOSITION PROCESSES FOR PASSIVATION FILMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (05): : 1082 - 1099

[10] KRYSZEWSKI M, 1979, ACS S SERIES, P219

[1] Bell A. T., 1974, Techniques and applications of plasma chemistry, P1

[2] THIN-FILM ADHESION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (01): : 106 - 113

[3] ELECTRICAL PROPERTIES OF VAPOR-DEPOSITED SILICON NITRIDE AND SILICON OXIDE FILMS ON SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) : 300 - &

[4] EFFECTS OF PROCESSING ON RADIATION-DAMAGE IN SIO2 [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 644 - 647

[5] Gordon A. J., 1972, CHEM COMPANION HDB P

[6] GROVE AS, 1967, PHYS TECHNOL S, P346

[7] HETZLER Y, 1978, J APPL PHYS, V49, P5617

[8] HIGH-FIELD ELECTRONIC PROPERTIES OF SIO2 [J]. SOLID-STATE ELECTRONICS, 1978, 21 (01) : 251 - 258

[9] ADVANCES IN DEPOSITION PROCESSES FOR PASSIVATION FILMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (05): : 1082 - 1099

[10] KRYSZEWSKI M, 1979, ACS S SERIES, P219