ELECTRON-SPIN-RESONANCE STUDY OF HIGH-FIELD STRESSING IN METAL-OXIDE-SILICON DEVICE OXIDES

[1] ELECTRON-SPIN-RESONANCE STUDIES OF THERMALLY OXIDIZED SILICON-WAFERS [J]. SOLID STATE COMMUNICATIONS, 1981, 37 (05) : 399 - 404

[2] ESR CENTERS, INTERFACE STATES, AND OXIDE FIXED CHARGE IN THERMALLY OXIDIZED SILICON WAFERS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) : 5847 - 5854

[3] OXYGEN VACANCY MODEL FOR E'/1 CENTER IN SIO2 [J]. SOLID STATE COMMUNICATIONS, 1974, 14 (03) : 225 - 229

[4] Griscom D.L., 1978, PHYSICS SIO2 ITS INT, P232

[5] HOLE TRAPS AND TRIVALENT SILICON CENTERS IN METAL-OXIDE SILICON DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3495 - 3499

[6] EFFECT OF BIAS ON RADIATION-INDUCED PARAMAGNETIC DEFECTS AT THE SILICON-SILICON DIOXIDE INTERFACE [J]. APPLIED PHYSICS LETTERS, 1982, 41 (06) : 542 - 544

[7] PARAMAGNETIC TRIVALENT SILICON CENTERS IN GAMMA-IRRADIATED METAL-OXIDE-SILICON STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 96 - 98

[8] LENAHAN PM, 1983, J APPL PHYS, V54, P1457, DOI 10.1063/1.332171

[9] ELECTRON-SPIN-RESONANCE STUDY OF INTERFACE STATES INDUCED BY ELECTRON INJECTION IN METAL-OXIDE-SEMICONDUCTOR DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (06) : 2054 - 2059

[10] A COMPARISON OF IONIZING-RADIATION AND HOT-ELECTRON EFFECTS IN MOS STRUCTURES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) : 1573 - 1575

[1] ELECTRON-SPIN-RESONANCE STUDIES OF THERMALLY OXIDIZED SILICON-WAFERS [J]. SOLID STATE COMMUNICATIONS, 1981, 37 (05) : 399 - 404

[2] ESR CENTERS, INTERFACE STATES, AND OXIDE FIXED CHARGE IN THERMALLY OXIDIZED SILICON WAFERS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) : 5847 - 5854

[3] OXYGEN VACANCY MODEL FOR E'/1 CENTER IN SIO2 [J]. SOLID STATE COMMUNICATIONS, 1974, 14 (03) : 225 - 229

[4] Griscom D.L., 1978, PHYSICS SIO2 ITS INT, P232

[5] HOLE TRAPS AND TRIVALENT SILICON CENTERS IN METAL-OXIDE SILICON DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3495 - 3499

[6] EFFECT OF BIAS ON RADIATION-INDUCED PARAMAGNETIC DEFECTS AT THE SILICON-SILICON DIOXIDE INTERFACE [J]. APPLIED PHYSICS LETTERS, 1982, 41 (06) : 542 - 544

[7] PARAMAGNETIC TRIVALENT SILICON CENTERS IN GAMMA-IRRADIATED METAL-OXIDE-SILICON STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 96 - 98

[8] LENAHAN PM, 1983, J APPL PHYS, V54, P1457, DOI 10.1063/1.332171

[9] ELECTRON-SPIN-RESONANCE STUDY OF INTERFACE STATES INDUCED BY ELECTRON INJECTION IN METAL-OXIDE-SEMICONDUCTOR DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (06) : 2054 - 2059

[10] A COMPARISON OF IONIZING-RADIATION AND HOT-ELECTRON EFFECTS IN MOS STRUCTURES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) : 1573 - 1575