A COMPARISON OF IONIZING-RADIATION AND HOT-ELECTRON EFFECTS IN MOS STRUCTURES

[1] HOT-CARRIER INSTABILITY IN IGFETS [J]. APPLIED PHYSICS LETTERS, 1975, 27 (03) : 147 - 148

[2] SI-29 HYPERFINE-STRUCTURE OF UNPAIRED SPINS AT THE SI/SIO2 INTERFACE [J]. APPLIED PHYSICS LETTERS, 1983, 43 (12) : 1111 - 1113

[3] ESR CENTERS, INTERFACE STATES, AND OXIDE FIXED CHARGE IN THERMALLY OXIDIZED SILICON WAFERS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) : 5847 - 5854

[4] RADIATION-INDUCED DEFECTS IN SIO2 AS DETERMINED WITH XPS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) : 1462 - 1466

[5] GRUNTHANER FJ, 1982, LETT, V40, P709

[6] Hughes HL., 1964, ELECTRONICS, V37, P58

[7] HOLE TRAPS AND TRIVALENT SILICON CENTERS IN METAL-OXIDE SILICON DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3495 - 3499

[8] RADIATION-INDUCED TRIVALENT SILICON DEFECT BUILDUP AT THE SI-SIO2 INTERFACE IN MOS STRUCTURES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) : 4105 - 4106

[9] EFFECT OF BIAS ON RADIATION-INDUCED PARAMAGNETIC DEFECTS AT THE SILICON-SILICON DIOXIDE INTERFACE [J]. APPLIED PHYSICS LETTERS, 1982, 41 (06) : 542 - 544

[10] LENAHAN PM, 1983, J APPL PHYS, V54, P1457, DOI 10.1063/1.332171

[1] HOT-CARRIER INSTABILITY IN IGFETS [J]. APPLIED PHYSICS LETTERS, 1975, 27 (03) : 147 - 148

[2] SI-29 HYPERFINE-STRUCTURE OF UNPAIRED SPINS AT THE SI/SIO2 INTERFACE [J]. APPLIED PHYSICS LETTERS, 1983, 43 (12) : 1111 - 1113

[3] ESR CENTERS, INTERFACE STATES, AND OXIDE FIXED CHARGE IN THERMALLY OXIDIZED SILICON WAFERS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) : 5847 - 5854

[4] RADIATION-INDUCED DEFECTS IN SIO2 AS DETERMINED WITH XPS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) : 1462 - 1466

[5] GRUNTHANER FJ, 1982, LETT, V40, P709

[6] Hughes HL., 1964, ELECTRONICS, V37, P58

[7] HOLE TRAPS AND TRIVALENT SILICON CENTERS IN METAL-OXIDE SILICON DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3495 - 3499

[8] RADIATION-INDUCED TRIVALENT SILICON DEFECT BUILDUP AT THE SI-SIO2 INTERFACE IN MOS STRUCTURES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) : 4105 - 4106

[9] EFFECT OF BIAS ON RADIATION-INDUCED PARAMAGNETIC DEFECTS AT THE SILICON-SILICON DIOXIDE INTERFACE [J]. APPLIED PHYSICS LETTERS, 1982, 41 (06) : 542 - 544

[10] LENAHAN PM, 1983, J APPL PHYS, V54, P1457, DOI 10.1063/1.332171