DIELECTRIC-CONSTANT OF GAAS DURING A SUBPICOSECOND LASER-INDUCED PHASE-TRANSITION

被引：33

作者：

SIEGAL, Y ^{[1
]}

GLEZER, EN ^{[1
]}

MAZUR, E ^{[1
]}

机构：

[1] HARVARD UNIV,DIV APPL SCI,CAMBRIDGE,MA 02138

来源：

PHYSICAL REVIEW B | 1994年 / 49卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.49.16403

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We measured the time evolution of the real and imaginary parts of the dielectric constant of GaAs following femtosecond laser pulse excitation. The data show a collapse of the average optical gap, or average bonding-antibonding energy-level separation. The rate of collapse increases with pump fluence. The decrease in the gap indicates that the pump beam induces a structural transformation from a covalent, tetrahedrally coordinated crystal to a phase with metallic cohesive properties.

引用

页码：16403 / 16406

页数：4

共 22 条

[1] OPTICAL-PROPERTIES OF GAAS AND ITS ELECTROCHEMICALLY GROWN ANODIC OXIDE FROM 1.5 TO 6.0 EV [J].