ELECTRICAL STUDIES ON (MO/W)SE2 SINGLE-CRYSTALS .3. ANISOTROPY IN RESISTIVITY

被引：7

作者：

AGARWAL, MK

PATEL, PD

VIJAYAN, O

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1983年 / 79卷 / 01期

关键词：

D O I：

10.1002/pssa.2210790110

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：103 / 108

页数：6

共 23 条

[1] MECHANISM OF THRESHOLD SWITCHING IN AMORPHOUS ALLOYS [J].

ADLER, D ;

HENISCH, HK ;

MOTT, N .

REVIEWS OF MODERN PHYSICS, 1978, 50 (02) :209-220

[2]

Agarwal M. K., 1982, Bulletin of Materials Science, V4, P467, DOI 10.1007/BF02748743

[3] GROWTH-CONDITIONS AND CRYSTAL-STRUCTURE PARAMETERS OF LAYER COMPOUNDS IN THE SERIES MO1-XWXSE2 [J].

AGARWAL, MK ;

WANI, PA .

MATERIALS RESEARCH BULLETIN, 1979, 14 (06) :825-830

[4] ELECTRICAL STUDIES ON (MO/W)SE-2 SINGLE-CRYSTALS .1. ELECTRICAL-RESISTIVITY [J].

AGARWAL, MK ;

PATEL, PD ;

VIJAYAN, O .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 78 (01) :133-136

[5] ELECTRICAL STUDIES ON (MO/W)SE-2 SINGLE-CRYSTALS .2. TEMPERATURE-DEPENDENCE OF HALL-EFFECT [J].

AGARWAL, MK ;

PATEL, PD ;

VIJAYAN, O .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 78 (02) :469-473

[6]

AGARWAL MK, 1982, SILVER JUBILEE PHY C, V24, P499

[7]

Atakishiev S. M., 1969, Physica Status Solidi B, V32, pk33, DOI 10.1002/pssb.19690320160

[8] TRANSPORT PROPERTIES OF MOTE2-X AND MOSE2-X COMPOUNDS BETWEEN 130 AND 300 DEGREES K [J].

CONAN, A ;

GOUREAUX, G ;

ZOAETER, M .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (04) :315-320

[9] PREPARATION AND PROPERTIES OF A NEW POLYTYPE OF TANTALUM DISULFIDE (4HB-TAS2) [J].

DISALVO, FJ ;

BAGLEY, BG ;

VOORHOEVE, JM ;

WASZCZAK, JV .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1973, 34 (08) :1357-1362

[10] ANISOTROPY IN RESISTIVITY OF NBSE2 [J].

EDWARDS, J ;

FRINDT, RF .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (09) :2217-&

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