ETCHED-COUPLED-CAVITY INGAASP/INP LASERS

被引：5

作者：

CHEN, KL ^{[1
]}

WANG, S ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720

来源：

ELECTRONICS LETTERS | 1985年 / 21卷 / 03期

关键词：

D O I：

10.1049/el:19850065

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：94 / 95

页数：2

共 10 条

[1] GAINASP INP INTEGRATED LASER WITH BUTT-JOINTED BUILT-IN DISTRIBUTED-BRAGG-REFLECTION WAVEGUIDE
ABE, Y
KISHINO, K
SUEMATSU, Y
ARAI, S
[J]. ELECTRONICS LETTERS, 1981, 17 (25-2) : 945 - 947
[2] LASING CHARACTERISTICS OF DISTRIBUTED-FEEDBACK GAAS-GAALAS DIODE-LASERS WITH SEPARATE OPTICAL AND CARRIER CONFINEMENT
AIKI, K
NAKAMURA, M
UMEDA, JI
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1976, 12 (10) : 597 - 603
[3] SHORT-CAVITY SINGLE-MODE 1.3 MU-INGAASP LASERS WITH EVAPORATED HIGH-REFLECTIVITY MIRRORS
BURRUS, CA
LEE, TP
DENTAI, AG
[J]. ELECTRONICS LETTERS, 1981, 17 (25-2) : 954 - 956
[4] SEMICONDUCTOR INTERNAL-REFLECTION-INTERFERENCE LASER
CHOI, HK
WANG, S
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (07) : 571 - 573
[5] ANALYSIS OF 2-SECTION COUPLED-CAVITY SEMICONDUCTOR-LASERS
CHOI, HK
CHEN, KL
WANG, S
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (04) : 385 - 393
[6] ANALYSIS AND DESIGN OF COUPLED-CAVITY LASERS .1. THRESHOLD GAIN ANALYSIS AND DESIGN GUIDELINES
COLDREN, LA
KOCH, TL
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (06) : 659 - 670
[7] SINGLE-MODE OPERATION OF COUPLED-CAVITY GAINASP-INP SEMICONDUCTOR-LASERS
EBELING, KJ
COLDREN, LA
MILLER, BI
RENTSCHLER, JA
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (01) : 6 - 8
[8] LEE TP, 1984, IEEE J QUANTUM ELECT, V20, P374
[9] GAAS INTEGRATED OPTICAL CIRCUITS BY WET CHEMICAL ETCHING
MERZ, JL
LOGAN, RA
SERGENT, AM
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (02) : 72 - 82
[10] TSANG WT, 1983, APPL PHYS LETT, V42, P650, DOI 10.1063/1.94053

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