ANALYSIS OF 2-SECTION COUPLED-CAVITY SEMICONDUCTOR-LASERS

被引：36

作者：

CHOI, HK ^{[1
]}

CHEN, KL ^{[1
]}

WANG, S ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,COMP SCI & ELECTR RES LAB,BERKELEY,CA 94720

来源：

关键词：

D O I：

10.1109/JQE.1984.1072397

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：385 / 393

页数：9

共 40 条

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[2] ANTREASYAN A, 1983, P INT C INTEGRATED O
[3] CASEY HC, 1978, HETEROSTRUCTURE LA A, P165
[4] CASEY HC, 1978, HETEROSTRUCTURE LA A, P31
[5] CHINONE N, 1982, 8TH P IEEE INT SEM C
[6] SEMICONDUCTOR INTERNAL-REFLECTION-INTERFERENCE LASER
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[J]. APPLIED PHYSICS LETTERS, 1982, 40 (07) : 571 - 573
[7] GAAS/GAALAS ACTIVE-PASSIVE-INTERFERENCE LASER
CHOI, HK
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[J]. ELECTRONICS LETTERS, 1983, 19 (08) : 302 - 303
[8] CHOI HK, 1983, THESIS U CALIFORNIA, P173
[9] CHOI HK, 1983, THESIS U CALIFORNIA, P13
[10] SINGLE LONGITUDINAL MODE-OPERATION OF 2-SECTION GALNASP/INP LASERS UNDER PULSED EXCITATION
COLDREN, LA
EBELING, KJ
MILLER, BI
RENTSCHLER, JA
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (06) : 1057 - 1062