SEMICONDUCTOR INTEGRATED ETALON INTERFERENCE LASER WITH A CURVED RESONATOR

被引：12

作者：

ANTREASYAN, A ^{[1
]}

WANG, S ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 07期

关键词：

D O I：

10.1063/1.94028

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：562 / 564

页数：3

共 15 条

[1] GAAS-GAALAS DISTRIBUTED-FEEDBACK DIODE LASERS WITH SEPARATE OPTICAL AND CARRIER CONFINEMENT
AIKI, K
NAKAMURA, M
UMEDA, J
YARIV, A
KATZIR, A
YEN, HW
[J]. APPLIED PHYSICS LETTERS, 1975, 27 (03) : 145 - 146
[2] CHANNELED-SUBSTRATE PLANAR STRUCTURE (ALGA)AS INJECTION-LASERS
AIKI, K
NAKAMURA, M
KURODA, T
UMEDA, J
[J]. APPLIED PHYSICS LETTERS, 1977, 30 (12) : 649 - 651
[3] SEMICONDUCTOR INTERNAL-REFLECTION-INTERFERENCE LASER
CHOI, HK
WANG, S
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (07) : 571 - 573
[4] SEMICONDUCTOR INTERFEROMETRIC LASER
FATTAH, IHA
WANG, S
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (02) : 112 - 114
[5] STIMULATED EMISSION IN A PERIODIC STRUCTURE
KOGELNIK, H
SHANK, CV
[J]. APPLIED PHYSICS LETTERS, 1971, 18 (04) : 152 - &
[6] HALF-RING (GAAL)AS DOUBLE-HETEROJUNCTION INJECTION-LASERS
LIAO, ASH
WANG, S
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (05) : 353 - 356
[7] BENT-GUIDE STRUCTURE ALGAAS-GAAS SEMICONDUCTOR-LASER
MATSUMOTO, N
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1977, 13 (08) : 560 - 564
[8] LONGITUDINAL-MODE BEHAVIORS OF MODE-STABILIZED ALXGA1-XAS INJECTION-LASERS
NAKAMURA, M
AIKI, K
CHINONE, N
ITO, R
UMEDA, J
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (09) : 4644 - 4648
[9] TRANSVERSE-JUNCTION-STRIPE LASERS WITH A GAAS P-N HOMOJUNCTION
NAMIZAKI, H
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) : 427 - 431
[10] LARGE-OPTICAL-CAVITY GAAS-(GAAL)AS INJECTION-LASER WITH LOW-LOSS DISTRIBUTED BRAGG REFLECTORS
NAMIZAKI, H
SHAMS, MK
WANG, S
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (02) : 122 - 124

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