BENT-GUIDE STRUCTURE ALGAAS-GAAS SEMICONDUCTOR-LASER

被引：10

作者：

MATSUMOTO, N ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP,ELECT COMMUN LABS,TOKYO,JAPAN

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1977年 / 13卷 / 08期

关键词：

D O I：

10.1109/JQE.1977.1069428

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：560 / 564

页数：5

共 11 条

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[7] HIGH-POWER NARROW-LINEWIDTH OPERATION OF GAAS DIODE LASERS [J].

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[8] INTEGRATED TWIN-GUIDE ALGAAS LASER WITH MULTIHETEROSTRUCTURE [J].

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[9]

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[10] MONOLITHIC PASSIVATED STRIPE GEOMETRY DOUBLE HETEROSTRUCTURE INJECTION-LASERS BY SELECTIVE CHEMICAL ETCHING [J].

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SHOJI, A .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 :293-299

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