SINGLE LONGITUDINAL MODE-OPERATION OF 2-SECTION GALNASP/INP LASERS UNDER PULSED EXCITATION

被引:23
作者
COLDREN, LA [1 ]
EBELING, KJ [1 ]
MILLER, BI [1 ]
RENTSCHLER, JA [1 ]
机构
[1] UNIV GOTTINGEN,INST PHYS 3,D-3400 GOTTINGEN,FED REP GER
关键词
D O I
10.1109/JQE.1983.1071989
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1057 / 1062
页数:6
相关论文
共 17 条
[1]   LOW-THRESHOLD-CURRENT DISTRIBUTED-FEEDBACK INGAASP/INP CW LASERS [J].
AKIBA, S ;
UTAKA, K ;
SAKAI, K ;
MATSUSHIMA, Y .
ELECTRONICS LETTERS, 1982, 18 (02) :77-78
[2]  
Casey Jr H. C., 1978, HETEROSTRUCTURE LA A
[3]   MONOLITHIC 2-SECTION GAINASP-INP ACTIVE-OPTICAL-RESONATOR DEVICES FORMED BY REACTIVE ION ETCHING [J].
COLDREN, LA ;
MILLER, BI ;
IGA, K ;
RENTSCHLER, JA .
APPLIED PHYSICS LETTERS, 1981, 38 (05) :315-317
[4]   ETCHED MIRROR AND GROOVE-COUPLED GALNASP/INP LASER DEVICES FOR INTEGRATED-OPTICS [J].
COLDREN, LA ;
FURUYA, K ;
MILLER, BI ;
RENTSCHLER, JA .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (10) :1679-1688
[5]  
COLDREN LA, UNPUB J ELECTROCHEM
[6]  
COLDREN LA, 1982, JAN P TOP M INT GUID
[7]  
COLDREN LA, UNPUB 2 CAVITY SEMIC
[8]   GENERATION OF SINGLE-LONGITUDINAL-MODE SUB-NANOSECOND LIGHT-PULSES BY HIGH-SPEED CURRENT MODULATION OF MONOLITHIC 2-SECTION SEMICONDUCTOR-LASERS [J].
EBELING, KJ ;
COLDREN, LA ;
MILLER, BI ;
RENTSCHLER, JA .
ELECTRONICS LETTERS, 1982, 18 (21) :901-902
[9]   SINGLE-MODE OPERATION OF COUPLED-CAVITY GAINASP-INP SEMICONDUCTOR-LASERS [J].
EBELING, KJ ;
COLDREN, LA ;
MILLER, BI ;
RENTSCHLER, JA .
APPLIED PHYSICS LETTERS, 1983, 42 (01) :6-8
[10]  
EBELING KJ, 1983, J APPL PHYS MAY