GENERATION OF SINGLE-LONGITUDINAL-MODE SUB-NANOSECOND LIGHT-PULSES BY HIGH-SPEED CURRENT MODULATION OF MONOLITHIC 2-SECTION SEMICONDUCTOR-LASERS

被引：27

作者：

EBELING, KJ

COLDREN, LA

MILLER, BI

RENTSCHLER, JA

机构：

来源：

ELECTRONICS LETTERS | 1982年 / 18卷 / 21期

关键词：

D O I：

10.1049/el:19820614

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：901 / 902

页数：2

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[1] MONOLITHIC 2-SECTION GAINASP-INP ACTIVE-OPTICAL-RESONATOR DEVICES FORMED BY REACTIVE ION ETCHING
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[2] COLDREN LA, 1982, IEEE J QUANTUM ELECT, V18
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[J]. ELECTRONICS LETTERS, 1980, 16 (12) : 456 - 458
[5] LASING CHARACTERISTICS OF 1.5-1.6 MU-M GAINASP-INP INTEGRATED TWIN-GUIDE LASERS WITH 1ST-ORDER DISTRIBUTED BRAGG REFLECTORS
UTAKA, K
KOBAYASHI, K
SUEMATSU, Y
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (05) : 651 - 658