GAAS/GAALAS ACTIVE-PASSIVE-INTERFERENCE LASER

被引：2

作者：

CHOI, HK ^{[1
]}

WANG, S ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 08期

关键词：

D O I：

10.1049/el:19830210

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：302 / 303

页数：2

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[J]. APPLIED PHYSICS LETTERS, 1982, 40 (07) : 571 - 573
[2] ETCHED MIRROR AND GROOVE-COUPLED GALNASP/INP LASER DEVICES FOR INTEGRATED-OPTICS
COLDREN, LA
FURUYA, K
MILLER, BI
RENTSCHLER, JA
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (10) : 1679 - 1688
[3] SEMICONDUCTOR INTERFEROMETRIC LASER
FATTAH, IHA
WANG, S
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (02) : 112 - 114
[4] LONGITUDINAL MODE CONTROL IN GAAS-LASERS USING A 3-MIRROR ACTIVE-PASSIVE CAVITY
GARMIRE, E
EVANS, G
NIESEN, J
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (10) : 789 - 791
[5] BENT-GUIDE STRUCTURE ALGAAS-GAAS SEMICONDUCTOR-LASER
MATSUMOTO, N
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1977, 13 (08) : 560 - 564
[6] GAAS INTEGRATED OPTICAL CIRCUITS BY WET CHEMICAL ETCHING
MERZ, JL
LOGAN, RA
SERGENT, AM
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (02) : 72 - 82