VARIABLE MINORITY-CARRIER TRANSPORT MODEL FOR AMORPHOUS-SILICON SOLAR-CELLS

[1] Carlson D. E., 1979, Amorphous semiconductors, P287

[2] EFFECTS OF GEMINATE RECOMBINATION ON THE PHOTO-VOLTAIC CHARACTERISTICS OF ALPHA-SI-H SCHOTTKY-BARRIER SOLAR-CELLS [J]. APPLIED PHYSICS LETTERS, 1980, 37 (10) : 952 - 955

[3] CHEN I, J APPL PHYS

[4] HAMAKAWA Y, 1982, AMORPHOUS SEMICONDUC, P134

[5] HANAK JJ, 1979, 2ND P EUR COMM PHOT, P270

[6] OPTIMIZATION OF GD A-SI-H FILM PROPERTY FOR PHOTO-VOLTAIC DEVICE BY MEANS OF THE CROSS FIELD PLASMA DEPOSITION TECHNIQUE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1982, 21 (01) : 289 - 295

[7] Hovel H.J., 1975, SOL CELLS, V11, P48

[8] KONAGAI M, 1982, UNPUB 3RD P PHOT SCI

[9] OBSERVATION OF 2 MODES OF CURRENT TRANSPORT THROUGH PHOSPHORUS-DOPED AMORPHOUS HYDROGENATED SILICON SCHOTTKY BARRIERS [J]. APPLIED PHYSICS LETTERS, 1982, 40 (03) : 234 - 236

[10] MCKELVEY JP, 1966, SOLID STATE SEMICOND, P337

[1] Carlson D. E., 1979, Amorphous semiconductors, P287

[2] EFFECTS OF GEMINATE RECOMBINATION ON THE PHOTO-VOLTAIC CHARACTERISTICS OF ALPHA-SI-H SCHOTTKY-BARRIER SOLAR-CELLS [J]. APPLIED PHYSICS LETTERS, 1980, 37 (10) : 952 - 955

[3] CHEN I, J APPL PHYS

[4] HAMAKAWA Y, 1982, AMORPHOUS SEMICONDUC, P134

[5] HANAK JJ, 1979, 2ND P EUR COMM PHOT, P270

[6] OPTIMIZATION OF GD A-SI-H FILM PROPERTY FOR PHOTO-VOLTAIC DEVICE BY MEANS OF THE CROSS FIELD PLASMA DEPOSITION TECHNIQUE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1982, 21 (01) : 289 - 295

[7] Hovel H.J., 1975, SOL CELLS, V11, P48

[8] KONAGAI M, 1982, UNPUB 3RD P PHOT SCI

[9] OBSERVATION OF 2 MODES OF CURRENT TRANSPORT THROUGH PHOSPHORUS-DOPED AMORPHOUS HYDROGENATED SILICON SCHOTTKY BARRIERS [J]. APPLIED PHYSICS LETTERS, 1982, 40 (03) : 234 - 236

[10] MCKELVEY JP, 1966, SOLID STATE SEMICOND, P337