OBSERVATION OF 2 MODES OF CURRENT TRANSPORT THROUGH PHOSPHORUS-DOPED AMORPHOUS HYDROGENATED SILICON SCHOTTKY BARRIERS

被引：17

作者：

MADAN, A

CZUBATYJ, W

YANG, J

SHUR, MS

SHAW, MP

机构：

[1] UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55414

[2] WAYNE STATE UNIV,DEPT ELECT & COMP ENGN,DETROIT,MI 48202

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 03期

关键词：

D O I：

10.1063/1.93057

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：234 / 236

页数：3

共 14 条

[1] THICKNESS AND TEMPERATURE-DEPENDENCE OF THE CONDUCTIVITY OF PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON [J].

AST, DG ;

BRODSKY, MH .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 41 (03) :273-285

[2]

COHEN JD, 1981, B AM PHYS SOC, V26, P330

[3] INFLUENCE OF PREPARATION CONDITIONS ON FORWARD-BIAS CURRENTS OF AMORPHOUS SILICON SCHOTTKY DIODES [J].

DENEUVILLE, A ;

BRODSKY, MH .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) :1414-1421

[4] CONDUCTIVITY, THERMOPOWER, AND STATISTICAL SHIFT IN AMORPHOUS-SEMICONDUCTORS [J].

DOHLER, GH .

PHYSICAL REVIEW B, 1979, 19 (04) :2083-2091

[5] CHARACTERIZATION OF GLOW-DISCHARGE DEPOSITED A-SI-H [J].

FRITZSCHE, H .

SOLAR ENERGY MATERIALS, 1980, 3 (04) :447-501

[6] THERMOELECTRIC-POWER IN PHOSPHORUS DOPED AMORPHOUS SILICON [J].

JONES, DI ;

COMBER, PGL ;

SPEAR, WE .

PHILOSOPHICAL MAGAZINE, 1977, 36 (03) :541-551

[7] INVESTIGATION OF DENSITY OF LOCALIZED STATES IN A-SI USING FIELD-EFFECT TECHNIQUE [J].

MADAN, A ;

LECOMBER, PG ;

SPEAR, WE .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1976, 20 (02) :239-257

[8]

Madan A., 1980, Proceedings of the Society of Photo-Optical Instrumentation Engineers, V248, P26

[9] DENSITY OF STATES IN AMORPHOUS-SILICON DETERMINED FROM TRANSPORT EXPERIMENTS [J].

OVERHOF, H ;

BEYER, W .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :375-380

[10]

RHODERICK EH, 1979, METAL SEMICONDUCTOR

← 1 2 →