INCREASED JUNCTION BREAKDOWN VOLTAGES IN SILICON-ON-INSULATOR DIODES

被引：4

作者：

CHEN, HS ^{[1
]}

LI, SS ^{[1
]}

FOX, RM ^{[1
]}

KRULL, WA ^{[1
]}

机构：

[1] HARRIS SEMICOND CORP,MELBOURNE,FL 32901

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 03期

关键词：

D O I：

10.1109/16.19958

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：488 / 492

页数：5

共 9 条

[1]

Armstrong H. L., 1957, IRE T ELECTRON DEV, VED-4, P15

[2]

BALIGA BJ, 1981, APPLIED SOLID STAT D, V2

[3] DETERMINATION OF THE FIXED OXIDE CHARGE AND INTERFACE TRAP DENSITIES FOR BURIED OXIDE LAYERS FORMED BY OXYGEN IMPLANTATION [J].

BRADY, FT ;

LI, SS ;

BURK, DE ;

KRULL, WA .

APPLIED PHYSICS LETTERS, 1988, 52 (11) :886-888

[4]

CLARK OM, 1960, J ELECTROCHEM SOC, V107, pC269

[5]

LIM HK, 1983, IEEE T ELECTRON DEV, V30, P1244

[6]

MACIVER BA, 1987, IEEE CIRCUIT DEVIC, P27

[7] MICROSTRUCTURE OF HIGH-TEMPERATURE ANNEALED BURIED OXIDE SILICON-ON-INSULATOR [J].

MAO, BY ;

CHANG, PH ;

LAM, HW ;

SHEN, BW ;

KEENAN, JA .

APPLIED PHYSICS LETTERS, 1986, 48 (12) :794-796

[8]

RAVI KU, 1981, IMPERFECTION IMPURIT

[9]

SZE SM, 1981, PHYSICS SEMICONDUCTO

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