SI-O BOND STRUCTURE IN SLOW-ION DEPOSITED SIO2-FILMS

被引：5

作者：

BAEK, DH

KIM, BO

JEONG, JI

KIM, CY

CHUNG, JW

机构：

[1] POHANG INST SCI & TECHNOL,DEPT PHYS,POHANG 790330,SOUTH KOREA

[2] POHANG INST SCI & TECHNOL,BASIC SCI RES CTR,POHANG 790330,SOUTH KOREA

[3] RES INST IND SCI & TECHNOL,DIV PHYS,POHANG 790330,SOUTH KOREA

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 05期

关键词：

D O I：

10.1063/1.348565

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By impinging a beam of O2+ ions of energy 150 eV < E < 1 keV on a Si (100) surface, we produced oxide films of varying thickness at room temperature. We find that the Si-O bond features of the films are quite similar to those of a thermally prepared vitreous SiO2 glass. We further observe that an intermediate range order in the form of n-member ring clusters with n = 4 and n = 6 exists in the resulting films.

引用

页码：3354 / 3356

页数：3

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