GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR WITH EXTREMELY LOW RESISTANCE NONALLOYED OHMIC CONTACTS USING AN INAS/GAAS SUPERLATTICE

被引:10
作者
KUMAR, NS
CHYI, JI
PENG, CK
MORKOC, H
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D O I
10.1063/1.101803
中图分类号
O59 [应用物理学];
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页码:775 / 776
页数:2
相关论文
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[2]  
BERGER HH, 1969, FEB IEEE INT SOL STA, P162
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DRUMMOND TJ, 1982, J CRYST GROWTH, V55, P449
[4]   EXTREMELY LOW RESISTANCE NONALLOYED OHMIC CONTACTS ON GAAS USING INAS/INGAAS AND INAS/GAAS STRAINED-LAYER SUPERLATTICES [J].
PENG, CK ;
JI, G ;
KUMAR, NS ;
MORKOC, H .
APPLIED PHYSICS LETTERS, 1988, 53 (10) :900-901