EXTREMELY LOW RESISTANCE NONALLOYED OHMIC CONTACTS ON GAAS USING INAS/INGAAS AND INAS/GAAS STRAINED-LAYER SUPERLATTICES

被引：30

作者：

PENG, CK

JI, G

KUMAR, NS

MORKOC, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 10期

关键词：

D O I：

10.1063/1.100109

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：900 / 901

页数：2

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