EXTREMELY LOW NONALLOYED AND ALLOYED CONTACT RESISTANCE USING AN INAS CAP LAYER ON INGAAS BY MOLECULAR-BEAM EPITAXY

被引：20

作者：

PENG, CK

CHEN, J

CHYI, J

MORKOC, H

机构：

来源：

关键词：

D O I：

10.1063/1.341210

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：429 / 431

页数：3

共 11 条

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[10] OHMIC CONTACTS TO NORMAL-GAAS USING GRADED BAND-GAP LAYERS OF GA1-XINXAS GROWN BY MOLECULAR-BEAM EPITAXY
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