REAL-TIME STUDY OF MIGRATION IN ALUMINUM FILMS BY MEANS OF SUBANGSTROM-SENSITIVE SCATTERING AND PROFILING METHODS

被引：16

作者：

MATTSSON, L ^{[1
]}

LEPAGE, YH ^{[1
]}

ERICSON, F ^{[1
]}

机构：

[1] UNIV UPPSALA,DIV MAT SCI,S-75121 UPPSALA,SWEDEN

来源：

THIN SOLID FILMS | 1991年 / 198卷 / 1-2期

关键词：

12;

D O I：

10.1016/0040-6090(91)90333-S

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Low noise total integrated scattering is introduced as a versatile tool for quantitative ensemble average analysis of hillock formation in thin metal films over areas up to 1 mm2. With subangstrom roughness sensitivity and real-time capabilities, it provides an efficient means for non-contact studies of processes influencing thin film roughness. As an example, aluminium films on silicon wafers, heated from 40-degrees-C to 220-degrees-C, have been analysed in real time. A very distinct onset for hillock formation is found at about 75-degrees-C, and rapid annealing shows the formation of hillocks to take place on the time scale of a few minutes. Further analysis using subangstrom-sensitive stylus profiling and high resolution scanning and transmission electron microscopy reveals the microtopographical properties of hillocks and voids created by the thermally induced stress in the aluminium films.

引用

页码：149 / 156

页数：8