TIN THIN-FILM PREPARED BY CHEMICAL-VAPOR-DEPOSITION METHOD USING CP2TI(N3)2

被引：11

作者：

IKEDA, K

MAEDA, M

ARITA, Y

机构：

[1] NTT LSI Laboratories, Wakamiya, Atsugi-shi, Kanagawa, 243-01

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1993年 / 32卷 / 6B期

关键词：

TITANIUM NITRIDE; TIN; PHOTOEXCITATION; PHOTO CVD; THERMAL CVD; DEPOSITION; CP2 TI(N3)2; BARRIER LAYER;

D O I：

10.1143/JJAP.32.3085

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Two kinds of chemical vapor deposition (CVD) processes are described for depositing a titanium nitride (TiN) thin film using a biscyclopentadienyltitanium diazide (Cp2Ti(N3)2) Source. One is photo-assisted CVD and the other is thermal CVD. The CVD-TiN films are evaluated using thermal desorption spectroscopy and Auger electron spectroscopy. The results reveal that the films include hydrocarbon components consisting of five carbon atoms, and nitrogen atoms desorbed at temperatures over 600-degrees-C, and then Ti-C bonds are formed in the films. The film composition (N/Ti) is affected by nitrogen partial pressure. This relationship is significant at substrate temperatures above 400-degrees-C. Light irradiation makes it possible to deposit the film at below 350-degrees-C. These results indicate that the photo-assisted CVD is effective in making high-quality TiN thin film at low temperature region.

引用

页码：3085 / 3088

页数：4

共 9 条

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