PIEZORESISTIVITY OF BISMUTH

被引：6

作者：

BATE, RT

DROBISH, WE

EINSPRUCH, NG

机构：

来源：

PHYSICAL REVIEW | 1966年 / 149卷 / 02期

关键词：

D O I：

10.1103/PhysRev.149.485

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：485 / +

页数：1

共 12 条

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[3]

BOYLE WS, 1963, PROG SEMICOND, V7, P1

[4] APPARATUS FOR MEASUREMENT OF PIEZORESISTIVITY OF LOW RESISTIVITY MATERIALS [J].

DROBISH, WE ;

BATE, RT ;

EINSPRUCH, NG .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1966, 37 (04) :470-+

[5]

GIBSON AF, 1963, PROGRESS SEMICOND ED, V7, P1

[6] TRANSPORT PROPERTIES + BAND STRUCTURE IN BISMUTH ANTIMONY + THEIR ALLOYS [J].

HALL, JJ ;

KOENIG, SH .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (03) :241-&

[7] ELECTRONS AND HOLES IN BISMUTH [J].

JAIN, AL ;

KOENIG, SH .

PHYSICAL REVIEW, 1962, 127 (02) :442-&

[8] PIEZO-GALVANOMAGNETIC EFFECTS IN BISMUTH [J].

JAIN, AL ;

JAGGI, R .

PHYSICAL REVIEW, 1964, 135 (3A) :A708-+

[9] PIEZORESISTANCE IN BISMUTH [J].

KEYES, RW .

PHYSICAL REVIEW, 1956, 104 (03) :665-666

[10] NOTE ON MEASUREMENT OF FIGURE OF MERIT OF THERMOELECTRIC MATERIALS [J].

MYERS, WC ;

BATE, RT .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1960, 31 (04) :464-466

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