AN ATOMISTIC STUDY OF THE GAAS-PD INTERFACE

被引：15

作者：

KOBAYASHI, A ^{[1
]}

SAKURAI, T ^{[1
]}

HASHIZUME, T ^{[1
]}

SAKATA, T ^{[1
]}

机构：

[1] UNIV OSAKA PREFECTURE, COLL INTEGRATED ARTS & SCI, SAKAI, OSAKA 591, JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 10期

关键词：

D O I：

10.1063/1.336813

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：3448 / 3453

页数：6

相关论文

共 33 条

[1] SURFACE STOICHIOMETRY AND STRUCTURE OF GAAS
ARTHUR, JR
[J]. SURFACE SCIENCE, 1974, 43 (02) : 449 - 461
[2] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES
Brillson, L. J.
[J]. SURFACE SCIENCE REPORTS, 1982, 2 (02) : 123 - 326
[3] MEASUREMENT AND MODULATION OF ATOMIC INTER-DIFFUSION AT AU-AL-GAAS(110) INTERFACES
BRILLSON, LJ
MARGARITONDO, G
STOFFEL, NG
BAUER, RS
BACHRACH, RZ
HANSSON, G
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 880 - 885
[4] ATOMIC MODULATION OF INTER-DIFFUSION AT AU-GAAS INTERFACES
BRILLSON, LJ
MARGARITONDO, G
STOFFEL, NG
[J]. PHYSICAL REVIEW LETTERS, 1980, 44 (10) : 667 - 670
[5] ELECTRONIC PROPERTIES OF SILICON-TRANSITION METAL INTERFACE COMPOUNDS
Calandra, C.
Bisi, O.
Ottaviani, G.
[J]. SURFACE SCIENCE REPORTS, 1985, 4 (5-6) : 271 - 364
[6] APPLICATION OF HIGH-ENERGY ION CHANNELING TO GAAS(110), AU-GAAS(110) AND PD-GAAS(110)
GOSSMANN, HJ
GIBSON, WM
[J]. SURFACE SCIENCE, 1984, 139 (01) : 239 - 259
[7] Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700
[8] Hashizume T., UNPUB
[9] JIMBO A, UNPUB
[10] FERMI ENERGY PINNING BEHAVIOR AND CHEMICAL-REACTIVITY OF THE PD/GAAS (110) INTERFACE
KENDELEWICZ, T
PETRO, WG
PAN, SH
WILLIAMS, MD
LINDAU, I
SPICER, WE
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 113 - 115

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