DEPOSITION KINETICS OF PLATINUM SMALL OHMIC CONTACTS AND SCHOTTKY DIODES

A 351-363 nm wavelength argon laser is used to induce pyrolytic laser chemical vapor deposition of platinum, using platinum bishexafluoroacetylacetonate as a precursor. The deposit thicknesses and diameters are presented according to exposition time, precursor pressure, and laser spot diameter. Calculation of the temperature induced by the laser radiation exposition using a method developed by us allows us to study the kinetics of the deposition process which takes place either regimen controlled by the diffusion of the reactants or regimen controlled by the reaction kinetics, depending on the laser power density used. The process presents an apparent activation energy of about 6 kcal/mol. The deposits obtained present high purity and good electrical and morphological properties.