RAPID THERMAL ANNEALING OF LOW-TEMPERATURE GAAS-LAYERS

被引:49
作者
LILIENTALWEBER, Z [1 ]
LIN, XW [1 ]
WASHBURN, J [1 ]
SCHAFF, W [1 ]
机构
[1] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
关键词
D O I
10.1063/1.113911
中图分类号
O59 [应用物理学];
学科分类号
摘要
Electron microscopy studies of annealed GaAs layers grown by molecular beam epitaxy at low temperature (200°C) were used to monitor growth of As precipitates. Ostwald ripening kinetics was used to deduce a migration enthalpy of 1.4±0.3 eV for the diffusion mediating defect. A conclusive picture of the dominant diffusion mechanism can be given, attributing this value to the migration enthalpy of gallium vacancies (VGa), which is well established by other experiments. The present studies indicate that growth of As precipitates is driven by supersaturation of VGa. © 1995 American Institute of Physics.
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页码:2086 / 2088
页数:3
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