A NOVEL FLIP-CHIP INTERCONNECTION TECHNIQUE USING SOLDER BUMPS FOR HIGH-SPEED PHOTORECEIVERS

被引:22
作者
KATSURA, K
HAYASHI, T
OHIRA, F
HATA, S
IWASHITA, K
机构
[1] NIPPON TELEGRAPH & TEL PUBL CORP, OPTOELECTR LABS, ATSUGI, KANAGAWA 24301, JAPAN
[2] NIPPON TELEGRAPH & TEL PUBL CORP, YOKOSUKA ELECT COMMUN LABS, TRANSMISSION SYST LABS, YOKOSUKA, KANAGAWA 23803, JAPAN
关键词
D O I
10.1109/50.59160
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A flip-chip interconnection technique using small solder bumps instead of conventional wire bonding for high-speed broad-band photoreceivers is described. The technique achieves interconnection with low parasitic elements, no damage to devices, and easy assembly. A photoreceiver composed of a broad-band positive-intrinsic-negative (p-i-n) photodiode and a high-speed GaAs metal-semiconductor field-effect transistor (MESFET) preamplifier connected using solder bumps that are about 26 µm in diameter, with a frequency response of over 22 GHz at 1.55 µm, has been demonstrated. This confirms the effectiveness of the solder bump interconnection technique for future high-speed broad-band optical modules. © 1990 IEEE
引用
收藏
页码:1323 / 1327
页数:5
相关论文
共 6 条
[1]  
CUBERT JS, 1966, 16TH P EL COMP C, P156
[2]  
GOLDMANN LS, 1972, 22ND P EL COMP C, P332
[3]  
HAYASHI T, 1987, I ELECTRON INFORM CO, V2, P338
[4]  
HAYASHI T, 1990, IEICE JAPAN NAT C RE, V4, P225
[5]   A 630-MS/MM GAAS-MESFET WITH AU/WSIN REFRACTORY-METAL GATE [J].
ONODERA, K ;
TOKUMITSU, M ;
SUGITANI, S ;
YAMANE, Y ;
ASAI, K .
IEEE ELECTRON DEVICE LETTERS, 1988, 9 (08) :417-418
[6]  
SUSSMANN RS, 1985, ELECTRON LETT, V21, P593, DOI 10.1049/el:19850419