A 630-MS/MM GAAS-MESFET WITH AU/WSIN REFRACTORY-METAL GATE

被引：15

作者：

ONODERA, K

TOKUMITSU, M

SUGITANI, S

YAMANE, Y

ASAI, K

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 08期

关键词：

D O I：

10.1109/55.763

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：417 / 418

页数：2

共 10 条

[1]

ASAI K, IN PRESS J VAC SCI T

[2]

CANFIELD PC, 1987 GAAS IC S, P163

[3]

HEIME K, 1984, 17TH C SOL STAT DEV, P375

[4]

NAKAMURA H, 1983 GAAS IC S PHOEN, P134

[5]

ONODERA K, 1987, 48TH AUT M JAP SOC A

[6] CHARACTERIZATION OF A THIN SI-IMPLANTED AND RAPID THERMAL ANNEALED N-GAAS LAYER [J].

SUGITANI, S ;

YAMASAKI, K ;

YAMAZAKI, H .

APPLIED PHYSICS LETTERS, 1987, 51 (11) :806-808

[7]

TOKUMITSU M, 1988, 46TH DEV RES C BOULD

[8] CHARACTERIZATION OF REACTIVELY SPUTTERED WNX FILM AS A GATE METAL FOR SELF-ALIGNMENT GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS [J].

UCHITOMI, N ;

NAGAOKA, M ;

SHIMADA, K ;

MIZOGUCHI, T ;

TOYODA, N .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (06) :1392-1397

[9]

UENO K, 1985, 17TH C SOL STAT DEV, P405

[10] BURIED P-LAYER SAINT FOR VERY HIGH-SPEED GAAS LSIS WITH SUBMICROMETER GATE LENGTH [J].

YAMASAKI, K ;

KATO, N ;

HIRAYAMA, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) :2420-2425

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