CHARACTERIZATION OF A THIN SI-IMPLANTED AND RAPID THERMAL ANNEALED N-GAAS LAYER

被引：21

作者：

SUGITANI, S

YAMASAKI, K

YAMAZAKI, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 11期

关键词：

D O I：

10.1063/1.98872

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：806 / 808

页数：3

共 9 条

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[6]

Kuzuhara M., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P763

[7] NONALLOYED OHMIC CONTACTS TO SI-IMPLANTED GAAS ACTIVATED USING SIOXNY CAPPED INFRARED RAPID THERMAL ANNEALING [J].

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JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :1204-1209

[8] RAPID THERMAL ANNEALING OF BE, SI, AND ZN IMPLANTED GAAS USING AN ULTRAHIGH POWER ARGON ARC LAMP [J].

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[9]

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