SURFACE SPUTTERING RATE REDUCTION AND ITS EFFECT ON SIMS DEPTH PROFILING IN CESIUM-ION-BOMBARDED GAAS

[1] EVALUATION OF SECONDARY ION MASS-SPECTROMETRY PROFILE DISTORTIONS USING RUTHERFORD BACKSCATTERING [J]. APPLIED PHYSICS LETTERS, 1981, 39 (12) : 997 - 999

[2] GAUNEAU M, 1982, 3RD P INT C SEC ION, V3, P342

[3] GIBBONS JF, 1975, PROJECTED RANGE STAT

[4] SPUTTERING OF PTSI [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (10) : 5295 - 5305

[5] SURFACE-LAYER COMPOSITION CHANGES IN SPUTTERED ALLOYS AND COMPOUNDS [J]. APPLIED PHYSICS LETTERS, 1977, 30 (12) : 626 - 628

[6] PALMBERG PW, 1972, HDB AUGER ELECTRON S

[7] Schulz F., 1973, Radiation Effects, V18, P211, DOI 10.1080/00337577308232124

[8] SIMS INVESTIGATION OF VERY SHALLOW IMPLANTED SI LAYERS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 991 - 994

[9] EVALUATION OF A CESIUM POSITIVE-ION SOURCE FOR SECONDARY ION MASS-SPECTROMETRY [J]. ANALYTICAL CHEMISTRY, 1977, 49 (13) : 2023 - 2030

[10] ELEMENT-SPECIFIC BROADENING EFFECTS IN SIMS DEPTH PROFILING OF LIGHT IMPURITIES IMPLANTED IN SILICON [J]. SURFACE AND INTERFACE ANALYSIS, 1982, 4 (06) : 230 - 233

[1] EVALUATION OF SECONDARY ION MASS-SPECTROMETRY PROFILE DISTORTIONS USING RUTHERFORD BACKSCATTERING [J]. APPLIED PHYSICS LETTERS, 1981, 39 (12) : 997 - 999

[2] GAUNEAU M, 1982, 3RD P INT C SEC ION, V3, P342

[3] GIBBONS JF, 1975, PROJECTED RANGE STAT

[4] SPUTTERING OF PTSI [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (10) : 5295 - 5305

[5] SURFACE-LAYER COMPOSITION CHANGES IN SPUTTERED ALLOYS AND COMPOUNDS [J]. APPLIED PHYSICS LETTERS, 1977, 30 (12) : 626 - 628

[6] PALMBERG PW, 1972, HDB AUGER ELECTRON S

[7] Schulz F., 1973, Radiation Effects, V18, P211, DOI 10.1080/00337577308232124

[8] SIMS INVESTIGATION OF VERY SHALLOW IMPLANTED SI LAYERS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 991 - 994

[9] EVALUATION OF A CESIUM POSITIVE-ION SOURCE FOR SECONDARY ION MASS-SPECTROMETRY [J]. ANALYTICAL CHEMISTRY, 1977, 49 (13) : 2023 - 2030

[10] ELEMENT-SPECIFIC BROADENING EFFECTS IN SIMS DEPTH PROFILING OF LIGHT IMPURITIES IMPLANTED IN SILICON [J]. SURFACE AND INTERFACE ANALYSIS, 1982, 4 (06) : 230 - 233